Today, whether it is used in the switching of industrial or civilian products, insulated gate bipolar transistors (IGBT) can provide effective solutions to achieve high energy efficiency and high performance of the final product. In the market where energy is paramount, electronic designers first choose devices that can achieve high energy efficiency, and choose appropriate IGBTs for different applications. ON Semiconductor, which promotes high energy efficiency innovation, provides a wealth of discrete IGBT solutions, which are widely used in induction cookers, Uninterruptible power supply (UPS), solar inverter and inverter welding machine and other fields. IGBT technology overview IGBT has strong energy shock resistance and short circuit current resistance (5 to 10 microseconds). Existing IGBTs include channel non-punch-through (NPT), channel field cut-off (FS) first generation, and channel field cut-off second-generation IGBTs. With the advancement of the manufacturing process, 50-micron wafers and metal backplanes have been adopted. The ultra-thin wafers and their backside processing processes have reduced IGBT conduction and switching losses. Comparing the channel non-punch-through and channel field-stop IGBTs, it can be found that the electric field strength of the former decreases linearly to 0 in the silicon drift region (n-FZ), and the thickness of the silicon drift region is linearly proportional to the withstand voltage, so it has a high on-voltage Drop and high turn-off losses; the latter uses an N buffer layer to reduce the thickness of the silicon drift region and achieve ultra-thin wafers, thereby achieving low on-voltage drop and low turn-off losses.
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