In order to promote the development of the high-end medical imaging industry, ITRI and Jia Shida announced that they will jointly create the next-generation portable ultrasound system and chip autonomous technology, using the technical energy of ITRI ’s chip design and wireless communication, and cooperate with Jia Shida to develop handheld The portable ultrasonic scanner is expected to break through the high-end medical technology monopolized by Europe, America and Japan, and develop independent core technologies and patents to drive the integration of the ICT industry and high-end medical equipment. Zhan Yiren, director of the Institute of Electro-Optical Engineering of the Institute of Industrial Technology and Research, said that at present, the core technology of ultrasonic scanners is almost monopolized by large foreign companies. The Institute of Industrial Technology has successfully mastered the technology of ultrasonic system design platform. The basic technologies such as imaging processor chip technology, high signal-to-noise ratio analog chip technology, and high-voltage chip design packaging technology are expected to develop the first portable device made by Chinese people from hardware and software to chip design within two years. Color medical ultrasound system. According to the market analysis of the Institute of Industry and Economics of the Institute of Industrial Technology, Shao Yaohua, director of the Institute of Industrial Medicine, said that the global medical ultrasound scanner market is about 5 billion US dollars, and the annual growth rate is more than 5%, of which less than 6 kg of miniaturized ultrasound The fastest growth, from 2010 to 2015, the output value will be doubled from 600 million US dollars to 1.2 billion US dollars, with an annual growth rate of 10%, including flexible use, simple operation, low cost and lightweight portability, all driven by portable ultrasonic scanners The main cause of rapid growth. Diao Guodong, deputy director of the Institute of Electro-Optical Engineering of the Industrial Technology Research Institute, further stated that there are still many bottlenecks in the technology of portable ultrasound, such as insufficient battery life and low image resolution. With the development of technology and the increasing demand for mobile medical equipment, the future The function, quality and performance of the portable ultrasonic scanner will be greatly improved. Among all kinds of medical imaging inspection instruments, the ultrasound system is the best opportunity to achieve miniaturization and real-time dynamic detection. Ultrasound medical imaging diagnosis is different from other medical imaging equipment such as X-ray photography and nuclear resonance imaging (MRI) ), Does not require a radioactive source, is a safe, convenient and fast medical imaging diagnostic equipment, the scope of application in addition to medical, but also includes industrial testing, food testing, animal medical and other projects. The Institute of Industrial Technology and Jiashida work together to make ultrasound free from the weight limitations of traditional machines and greatly reduce the size of ultrasound. A handheld portable ultrasound scanner can be developed to make ultrasound use more popular. In the future, small clinics and physicians will have one , Can improve the diagnosis rate of primary medical diagnosis. At the same time, in remote areas or remote emergency medical treatment, it can also be combined with a smartphone. As long as it is connected to an ultrasonic detector, it can generate real-time images, becoming the best weapon for emergency ambulance and accelerating the development of mobile medical environment. Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors. 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