Shanghai Blu-ray high-power LED chip light efficiency has reached 120lm/w

[High-tech LED] Shanghai Blu-ray has proposed a new maskless lateral epitaxial technology to grow GaN thin films with lower dislocation density on sapphire substrates and form high-density nano-pits in situ on the surface of sapphire substrates. The rough interface between the substrate and GaN greatly improves the LED light extraction efficiency.

According to Shanghai Blu-ray, the company's main products GaN-based high-power LED chips (45 * 45 mil) luminous efficiency has reached 120lm / w @ 350mA, the mass production level has reached 100 lm / w @ 350mA. The production level of low-power chips (10*23 mil) has reached 7lm @ 20mA.

It is reported that by the end of 2010, Blu-ray Shanghai headquarters has 20 MOCVD production lines, with an annual output of 10 billion blue and green LED chips. The Anhui production base plans to have 200 MOCVD production lines, 50 in the first phase and 150 in the second phase.

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